Quantum Capacitance — Graphene DOS
Dirac cone band structure, quantum capacitance C_Q = e²·D(E_F)
Parameters
Gate voltage V_g (V):
0.2
Temperature (K):
300
Fermi velocity v_F (×10⁵ m/s):
10
Disorder broadening Γ (meV):
20
DOS graphene: D(E) = g_s g_v|E|/(2π(ℏv_F)²)
g_s=2 (spin), g_v=2 (valley)
C_Q = e²·D(E_F) [F/m²]
Dirac point: D(0) = 0 (linear bands)
Fermi energy: E_F = ℏv_F√(πn)
Fermi energy E_F:
—
C_Q (μF/cm²):
—
Carrier density n:
—
Regime:
—