Iris

Stimulus current (μA/cm²) 10
Temperature (°C) 6.3
gNa max (mS/cm²) 120
gK max (mS/cm²) 36
-65.0Vm (mV)
0.05Na m gate
0.60Na h gate
0.32K n gate
State

Hodgkin-Huxley equations

The membrane capacitance Cm·dV/dt = I_stim − gNa·m³·h·(V−ENa) − gK·n⁴·(V−EK) − gL·(V−EL). Each gate variable (m, h, n) follows dX/dt = α_X(V)(1−X) − β_X(V)·X, where α and β are voltage-dependent rate constants measured in squid giant axons by Hodgkin and Huxley in 1952.

Key reversal potentials: ENa ≈ +55 mV (Na⁺ rushes in during upstroke), EK ≈ −77 mV (K⁺ rushes out during repolarization), EL ≈ −54.4 mV (leak). The absolute refractory period (h gate inactivated) prevents re-stimulation for ~2 ms.

Temperature scales the rates by Q₁₀ = 3 per 10°C above 6.3°C. Higher temperature → faster, narrower spikes and higher maximum firing rate.

Vm (membrane voltage)
INa (sodium current)
IK (potassium current)
m·h·n gates